Welcome to the Predictive Technology Model (PTM) website!  PTM provides accurate, customizable, and predictive model files for future transistor and interconnect technologies. These predictive model files are compatible with standard circuit simulators, such as SPICE, and scalable with a wide range of process variations. With PTM, competitive circuit design and research can start even before the advanced semiconductor technology is fully developed. 


As an evolution of previous Berkeley Predictive Technology Model (BPTM), PTM will provide the following novel features for robust design exploration toward the 10nm regime:

  • Predictions of various transistor structures, such as bulk, FinFET (double-gate) and ultra-thin-body SOI, for sub-45nm technology nodes.
  • New methodology of prediction, which is more physical, scalable, and continuous over technology generations. 
  • Predictive models for emerging variability and reliability issues, such as NBTI.

To benchmark your design for nanoscale MOSFETs, download the latest PTM model cards or generate your own CMOS and interconnect models now! 



  • 06/01/2012: PTM-MG for multi-gate devices, such as bulk FinFET, from 20nm to 7nm nodes. Two versions are offered, high-performance (HP) and low-standby power (LSTP). This is jointly developed with ARM. The model files and some brief explanation are available from latest models.
  • 11/15/2008: PTM LP for low-power design is released, from 45nm to 16nm nodes. In conjunction with PTM HP,  it provides more choices for various design applications.
  • 9/30/2008: PTM HP for high-performance design applications is released, covering 45nm to 16nm nodes. PTM HP incorporates latest technology advances, including high-k/metal gate and strained silicon. A alternative choice for low-power design applications, PTM LP, is going to released soon.
  • 2/28/2008: PTM releases the predictive model for metallic carbon nanotube (CNT-interconnect), based on a similar modeling approach as that of CNT-FET. Verilog-A codes and the manual are available from post-Si.
  • 10/30/2007: PTM releases a new version for sub-45nm bulk CMOS, providing new modeling features on metal gate/high-k, gate leakage, temperature effect, and body bias.
  • 7/30/2007: PTM releases the first predictive model for post-Si devices: carbon nanotube FET (CNT-FET).
  • 2/11/2007: The tool of Nano-CMOS is implemented to nanoHUB, accessible at
  • 12/15/2006: The beta version of PTM for 22nm bulk CMOS is released.
  • 8/31/2006: The beta version of Nano-CMOS, an online tool to customize your own PTM files, is released. You can define your own inputs and obtain both nominal and variational model cards through Nano-CMOS
  • 4/28/2006: The beta version of PTM for NBTI is released for 250nm to 32nm nodes. 
  • 2/22/2006: A new generation of PTM for bulk CMOS technology is released for 130nm to 32nm nodes. The new PTM captures the latest technology advances. It achieves better scalability and continuity across technology generations.
  • 9/30/2005: PTM for 32nm bulk, 32nm FinFET, and 45nm FinFET technologies are available.    



PTM is developed by the Nanoscale Integration and Modeling (NIMO) Group at ASU. This project is sponsored by FCRP  Focus Center for Circuit and System Solutions (C2S2) and Materials Structures and Devices Center (MSD), and by Semiconductor Research Corporation (SRC).


Related Links

  • International Technology Roadmap for Semiconductors (ITRS)

  • BSIM developed by by the Device Group, University of California, Berkeley

  • nanoHUB at Purdue University

  • The MOS-AK group



Last updated 06/01/2011. Questions? Contact us.

Copyright 2007, Nanoscale Integration and Modeling (NIMO) Group, ASU. All rights reserved.